Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 °C in a tube furnace system. The nanowires have diameters in the range of 25−100 nm and lengths of up to tens of micrometers. Twinning growth occurs in GaP nanowires, and as a result most nanowires contain a high density of twinning faults. Novel necklacelike GaP nanostructures that were formed by stringing tens of amorphous Ga−P−O microbeads upon one crystalline GaP nanowires were also found in some synthesis runs. This simple vapor-phase approach may be applied to synthesize other important group III−V compound nanowires.


转载本文请联系原作者获取授权，同时请注明本文来自谷战军科学网博客。
链接地址：https://blog.sciencenet.cn/blog-100393-50329.html

上一篇：nanoworld-1
下一篇：没有人会在原地等你 ！我们要学会珍惜彼此-转载自小木虫