博文
Ultra-long, Free-standing Vo2 Micro/nanowires
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Ultra-long, free-standing, single-crystalline vanadium dioxide micro/nanowires grown by simple thermal evaporation
Recently, it was discovered that single-crystalline VO2 nanostructures exhibit unique, single-domain metal-insulator phase transition. They enable a wide range of device applications as well as discoveries of oxide physics beyond those can be achieved with VO2 bulk or thin films. Previous syntheses of these nanostructures are limited in density, aspect ratio, single-crystallinity, or by substrate clamping. Here we break these limitations and synthesize ultra-long, ultra-dense, and free-standing VO2micro/nanowires using a simple vapor transport method. These are achieved by enhancing the VO2 nucleation and growth rates using rough-surface quartz as the substrate and V2O5 powder as the evaporation source.
Appl. Phys. Lett. 100, 103111 (2012); http://dx.doi.org/10.1063/1.3693381
http://www.mse.berkeley.edu/~jwu/publications/Cheng-APL-2012.pdf
这里发展了一种生长高密度，超长二氧化钒微纳米线的简单热蒸发方法，巧妙应用粗糙表面实现"free-standing"生长，使得通常“in-plane"生长的氧化钒纳米线从衬底表面解放出来，这样使得这种强关联相变材料的转移变得容易，以实现对其性质及应用研究。此外超长mm级的微纳米线的生长，也使得其能够整合到大的宏观器件中实现功能化的应用。。。
https://blog.sciencenet.cn/blog-116314-546441.html
上一篇：博后第一篇工作：纳米尺度固气界面热传输
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Recently, it was discovered that single-crystalline VO2 nanostructures exhibit unique, single-domain metal-insulator phase transition. They enable a wide range of device applications as well as discoveries of oxide physics beyond those can be achieved with VO2 bulk or thin films. Previous syntheses of these nanostructures are limited in density, aspect ratio, single-crystallinity, or by substrate clamping. Here we break these limitations and synthesize ultra-long, ultra-dense, and free-standing VO2micro/nanowires using a simple vapor transport method. These are achieved by enhancing the VO2 nucleation and growth rates using rough-surface quartz as the substrate and V2O5 powder as the evaporation source.
Appl. Phys. Lett. 100, 103111 (2012); http://dx.doi.org/10.1063/1.3693381
http://www.mse.berkeley.edu/~jwu/publications/Cheng-APL-2012.pdf
这里发展了一种生长高密度，超长二氧化钒微纳米线的简单热蒸发方法，巧妙应用粗糙表面实现"free-standing"生长，使得通常“in-plane"生长的氧化钒纳米线从衬底表面解放出来，这样使得这种强关联相变材料的转移变得容易，以实现对其性质及应用研究。此外超长mm级的微纳米线的生长，也使得其能够整合到大的宏观器件中实现功能化的应用。。。
https://blog.sciencenet.cn/blog-116314-546441.html
上一篇：博后第一篇工作：纳米尺度固气界面热传输
下一篇：在美国第一次生病
