The integration high dielectric constant (high-k) materials with graphene nanoribbon (GNR) for top-gated transistors can push their performance limit for molecular electronics and allow for independently addressable device arrays. Here we report the synthesis of zirconium oxide nanowires using chemical vapor deposition and assembly of them on top of individual GNRs as high-k gate dielectrics for top-gated GNR field-effect transistors. We show that high performance GNR transistors can be readily obtained with transconductance reaching 2.0 mS mm^-1 (29 mS per GNR) and the carrier mobility up to 1310 cm²V^-1s^-1, both the highest ever reported for GNR devices. The ability to fabricate top-gate GNR transistors further allows us to demonstrate, for the first time, independently addressable device arrays and logic devices. This method opens a new avenue to integrate high-k dielectrics on GNR, representing an important step forward to high performance graphene electronics.

High-k Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene Transistors (PNAS)

Lei Liao,¹ Jingwei Bai,² Yongquan Qu,¹ Yungchen Lin,² Yujing Li,² Yu Huang,^2,3* Xiangfeng Duan?^1,3*

 Deposition of high-k dielectrics onto graphene is of significant challenge due to the difficulties to nucleate high quality oxide on pristine graphene without introducing defects into the monolayer of carbon lattice. Previous efforts to deposit high-k dielectrics on graphene often resulted in significant degradation in carrier mobility. Here we report an entirely new strategy to integrate high quality high-k dielectrics with graphene by first synthesizing free-standing high-k oxide nanoribbons at high temperature and then transferring them onto graphene at room temperature. We show that single crystalline Al₂O₃ nanoribbons can be synthesized with excellent dielectric properties. Using such nanoribbons as the gate dielectrics, we have demonstrated top-gated graphene transistors with the highest carrier mobility (up to 23,600 cm²/V·s) reported to date, and a more than 10 fold increase in transconductance compared to the back-gated devices. This method opens a new avenue to integrate high-k dielectrics on graphene with the preservation of the pristine nature of graphene and high carrier mobility, representing an important step forward to high performance graphene electronics.

两篇文章就方法上面来说有点重复，但是各有不同，希望大家不要拍砖。这里要感谢一下Dr. Xiaosheng Fang在氧化铝纳米带生长方面给我的一些帮助。