桂林山水电子材料分享 http://blog.sciencenet.cn/u/ljliu2 铁电、压电、微波介质材料

博文

晶界层电容器-内部阻挡层(晶界)厚度评价方法

已有 2872 次阅读 2017-4-11 15:43 |系统分类:科研笔记

晶界层电容器-内部阻挡层(晶界)厚度评价方法

晶界层陶瓷电容器通常由半导化的晶粒和绝缘化的晶界构成,晶界层的厚度对电学性能有着重要的影响。本文采用晶界掺杂方法,定量描述稀土元素的扩散动力学。采用双肖特基势垒模型评价了晶界层厚度。这个方法为电子陶瓷的掺杂、性能调控提供了新思路。



Laijun Liu, Liang Fang, Yanmin Huang, Yunhua Li, Danping Shi, Shaoying Zheng, Shuangshuang Wu, and Changzheng Hu, Dielectric and nonlinear current–voltage characteristics of rare–earth doped CaCu3Ti4O12 ceramics, Journal of Applied Physics, 2011(110): 094101 (6 Pages).



This work was financially supported by the Natural Science Foundation of China (Grant Nos. 51002036, 21061004,

and 50962004), and by the Natural Science Foundation of Guangxi (Grant No. C013002), and the Projects of Department of Science and Technology of Guangxi (Grant Nos.0842003 and 09-007-02).







http://blog.sciencenet.cn/blog-231188-1048192.html

上一篇:低温固相合成技术-制备纳米铌酸钠钾、钛酸铋钠
下一篇:弛豫体-反铁电体增强电致应变

0

该博文允许注册用户评论 请点击登录 评论 (0 个评论)

数据加载中...

Archiver|手机版|科学网 ( 京ICP备07017567号-12 )

GMT+8, 2020-11-30 11:05

Powered by ScienceNet.cn

Copyright © 2007- 中国科学报社

返回顶部