晶界层电容器-内部阻挡层（晶界）厚度评价方法

晶界层陶瓷电容器通常由半导化的晶粒和绝缘化的晶界构成，晶界层的厚度对电学性能有着重要的影响。本文采用晶界掺杂方法，定量描述稀土元素的扩散动力学。采用双肖特基势垒模型评价了晶界层厚度。这个方法为电子陶瓷的掺杂、性能调控提供了新思路。

Laijun Liu, Liang Fang, Yanmin Huang, Yunhua Li, Danping Shi, Shaoying Zheng, Shuangshuang Wu, and Changzheng Hu, Dielectric and nonlinear current–voltage characteristics of rare–earth doped CaCu₃Ti₄O₁₂ ceramics, Journal of Applied Physics, 2011(110): 094101 (6 Pages).

This work was financially supported by the Natural Science Foundation of China (Grant Nos. 51002036, 21061004,

and 50962004), and by the Natural Science Foundation of Guangxi (Grant No. C013002), and the Projects of Department of Science and Technology of Guangxi (Grant Nos.0842003 and 09-007-02).