Large-area (1 cm2), vertically aligned ZnGa2O4, Mn2+ doped ZnGa2O4 (ZnGa2O4:Mn2+) and Cr3+ doped ZnGa2O4 (ZnGa2O4:Cr3+ ) nanowire arrays were synthesized by a two-step thermal evaporation method using ZnO nanowire arrays as the templates followed by reaction with Ga and/or dopant (Mn ...
Vertically aligned, dense ZnO nanorod arrays were grown directly on zinc foils by a catalyst-free, low-temperature (450500 C) oxidization method. The zinc foils remain conductive even after the growth of ZnO nanorods on its surface. ...
Three-dimensional (3D) GeO 2 nanowire networks were fabricated by using germanium as both a source material and catalyst in an oxygen-rich growth environment. The branches within one network show very regular orientation relationships: either perpendicular or parallel to each other. The nanowires f ...
Gallium phosphide (GaP) nanowires were synthesized in a high yield by vapor-phase reaction of gallium vapor and phosphorus vapor at 1150 C in a tube furnace system. The nanowires have diameters in the range of 25100 nm and lengths of up to tens of micrometers. Twinning growth occurs in G ...
纳米领域文献计量分析研究的新方法
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