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G-band rectangular waveguide filter fabricated using DRIE

已有 3640 次阅读 2013-1-23 16:38 |个人分类:科学札记|系统分类:论文交流| MEMS, filter, waveguide, sub-terahertz, G-band

G-band rectangular waveguide filter fabricated using deep reactive ion etching and bonding processes
Zhao Xing-hai 1, 2 ; Shan Guang-cun 2 ; Du Yi-jia 3 ; Bao Jing-fu 3; Zhu Hao-shen 4 ; Zheng Ying-bin 1; Shek Chan-hung 2 ; Cheng Yong-sheng 1
1: Institute of Electronic Engineering, China Academy of Engineering Physics , Mianyang , People's Republic of China
2: Department of Physics and Materials Science, City University of Hong Kong , Kowloon , People's Republic of China
3: Department of Electronic Engineering, University of Electronic Science and Technology of China , Chengdu , People's Republic of China
4: Department of Electronic Engineering, City University of Hong Kong , Kowloon , People's Republic of China
Source: Micro & Nano Letters, Volume 7, issue12, December 2012, p. 1237 – 1240
Abstract

A G-band microelectromechanical system (MEMS) rectangular waveguide iris filter is designed and fabricated. The effects of the metallised layer and iris thickness, and roughness, on filter main performances are investigated. The prototypes were fabricated using MEMS manufacturing techniques. The key technique problems including deep etching, electroplating and bonding are researched and settled. The measured insertion loss can get to be 1.5–2.0 dB, the central frequency is 174 GHz, the bandwidth is 9.6 GHz, and the isolation out of the bandpass is larger than 15 dB. The test results show that the radio frequency MEMS filter meets practical requirements, which proves that it is a successful example for fabricating such rectangular waveguide devices at one to several hundred gigahertz frequencies using such presented processes.


















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