Professor, Materials Department, Director of the Center for Solid State Lighting and Displays, University of California, Santa Barbara, Santa Barbara, Calif.
Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with ...
S Nakamura, T Mukai, M Senoh - Applied Physics Letters, 1994 - scitation.aip.org
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐ emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was ...
S Nakamura - Optoelectronic properties of semiconductors and …, 2000 - books.google.com
InGaN multi-quantum-well-structure (MQW) laser diodes (LDs) with Alo. i4Gao. g6N/GaN modulation doped strained-layer superlattice (MD-SLS) cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime ...
S Nakamura - Japanese Journal of Applied Physics, 1991 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between science and engineering and an interactive platform for academia and the industry. JSAP is a" conduit" for the transfer of fundamental concepts to the industry for development and ...
S Nakamura, M Senoh, N Iwasa… - … JOURNAL OF APPLIED …, 1995 - 140.120.11.121
High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. The typical green LEDs had a peak wavelength of 525 nm and full ...
S Nakamura, M Senoh, N Iwasa… - Japanese journal of …, 1995 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between science and engineering and an interactive platform for academia and the industry. JSAP is a" conduit" for the transfer of fundamental concepts to the industry for development and ...
High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are ...
S Nakamura, N Iwasa, M Senoh… - Japanese journal of …, 1992 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between science and engineering and an interactive platform for academia and the industry. JSAP is a" conduit" for the transfer of fundamental concepts to the industry for development and ...
S Nakamura, T Mukai, M Senoh… - Japanese Journal of …, 1992 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between science and engineering and an interactive platform for academia and the industry. JSAP is a" conduit" for the transfer of fundamental concepts to the industry for development and ...
…, M Funato, S Fujita, S Fujita, S Nakamura - Applied physics …, 1997 - scitation.aip.org
Structural analysis was performed on a purple laser diode composed of In 0.20 Ga 0.80 N (3 nm)/In 0.05 Ga 0.95 N (6 nm) multiple quantum wells, by employing transmission electron microscopy and energy-dispersive x-ray microanalysis, both of which are assessed from ...
S Nakamura, T Mukai, M Senoh - Japanese Journal of Applied …, 1991 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between science and engineering and an interactive platform for academia and the industry. JSAP is a" conduit" for the transfer of fundamental concepts to the industry for development and ...
S Nakamura, M Senoh, S Nagahama… - Applied Physics …, 1998 - ieeexplore.ieee.org
InGaN multi-quantum-well-structure laser diodes with Al0. 14Ga0. 86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 ...
S Nakamura, M Senoh, N Iwasa… - Applied Physics …, 1995 - scitation.aip.org
High‐power blue and violet light‐emitting diodes (LEDs) based on III–V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the InGaN single‐quantum‐well‐structure was used. The violet LEDs produced 5.6 mW at 20 ...
S Nakamura, M Senoh, T Mukai - Applied Physics Letters, 1993 - scitation.aip.org
InGaN/GaN double‐heterostructure light‐emitting diodes were fabricated. The output power was 90 μW and the external quantum efficiency was as high as 0.15% at a forward current of 20 mA at room temperature. The peak wavelengths of the electroluminescence (EL) ...
S Nakamura, M Senoh, S Nagahama… - Applied Physics …, 1996 - scitation.aip.org
Continuous‐wave (cw) operation of InGaN multi‐quantum‐well structure laser diodes (LDs) was demonstrated at room temperature (RT). The threshold current and voltage of the LD were 130 mA and 8 V, respectively. The threshold carrier density was 9 kA/cm2. The ...
T Mukai, M Yamada, S Nakamura - Japanese Journal of Applied …, 1999 - iopscience.iop.org
Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and red light have been obtained through the use of InGaN active layers instead of GaN active layers. Red LEDs with an emission wavelength of 675 nm, whose emission energy was ...
这回 Applied Physics Letters 杂志很走光
AIP Publishing congratulates Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura on their receipt of the 2014 Nobel
Prize in Physics "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources". The following articles are seminal papers from the Nobel Laureates. They have been made free to download until the end of 2014.
Novel metalorganic chemical vapor deposition system for GaN growth
Shuji Nakamura, Yasuhiro Harada, Masayuki Seno
Appl. Phys. Lett. 58, 2021 (1991)
InGaN/AlGaN blue‐light‐emitting diodes
Shuji Nakamura
J. Vac. Sci. Technol. A 13, 705 (1995)
75 Å GaN channel modulation doped field effect transistors
Jinwook Burm, William J. Schaff, Lester F. Eastman, Hiroshi Amano, Isamu Akasaki
Appl. Phys. Lett. 68, 2849 (1996)
Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku
Appl. Phys. Lett. 69, 1568 (1996)
Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku
Appl. Phys. Lett. 69, 3034 (1996)
Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku
Appl. Phys. Lett. 70, 868 (1997)
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku
Appl. Phys. Lett. 70, 1417 (1997)
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho
Appl. Phys. Lett. 72, 2014 (1998)
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Tetsuya Takeuchi, Christian Wetzel, Hiroshi Amano, Isamu Akasaki
J. Appl. Phys. 85, 7682 (1999)
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta, Tetsuya Takeuchi, Christian Wetzel, Hiroshi Amano, Isamu Akasaki
Appl. Phys. Lett. 76, 876 (2000)
Control of strain in GaN by a combination of H2 and N2 carrier gases
Shigeo Yamaguchi, Michihiko Kariya, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Hiroshi Amano, Isamu Akasaki
J. Appl. Phys. 89, 7820 (2001)
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
Shigeo Yamaguchi, Yasuo Iwamura, Yasuhiro Watanabe, Masayoshi Kosaki, Yohei Yukawa, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
Appl. Phys. Lett. 80, 802 (2002)
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
Daisuke Iida, Syunsuke Kawai, Nobuaki Ema, Takayoshi Tsuchiya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Appl. Phys. Lett. 105, 072101 (2014)
Review article on the development of the materials used in the Nobel Laureates' work
III–nitrides: Growth, characterization, and properties
S. C. Jain, M. Willander, J. Narayan, R. Van Overstraeten
Journal of Applied Physics 87, 965 (2000)