ltsstu的个人博客分享 http://blog.sciencenet.cn/u/ltsstu

博文

利用真空能级理性设计储能材料 (afterglow phosphor and storage phosphor)

已有 2837 次阅读 2020-2-25 17:28 |个人分类:communication|系统分类:论文交流| 光学材料, 长余辉材料, 信息存储

title: 

Vacuum-Referred Binding Energies of Bismuth and Lanthanide Levels in ARE(Si,Ge)O4 (A = Li, Na; RE = Y, Lu): Toward Designing Charge-Carrier-Trapping Processes for Energy Storage


文章链接: https://pubs.acs.org/doi/10.1021/acs.chemmater.9b04341?fig=tgr1&ref=pdf


image.png


Abstract

Developing a feasible design principle for solid-state materials for persistent luminescence and storage phosphors with high charge carrier storage capacity remains a crucial challenge. Here we report a methodology for such rational design via vacuum referred binding energy (VRBE) diagram aided band structure engineering and crystal synthesis optimization. The ARE(Si,Ge)O4 (A = Li, Na; RE = Y, Lu) crystal system was selected as a model example. Low-temperature (10 K) photoluminescence excitation and emission spectra of bismuth- and lanthanide-doped ARE(Si,Ge)O4 system were first systematically studied, and the corresponding VRBE schemes were then established. Guided by these VRBE schemes, Bi3+ afterglow and storage phosphor properties were explored in NaLu1–xYxGeO4. By combining Bi3+ with Bi3+ itself or Eu3+, Bi3+ appears to act as a deep hole-trapping center, while Bi3+ and Eu3+ act as less-deep electron traps. Trap depth tunable afterglow and storage were realized in NaLu1–xYxGeO4:0.01Bi3+ and NaLu1–xYxGeO4:0.01Bi3+,0.001Eu3+ by adjusting x, leading to conduction band engineering. More than 28 h of persistent luminescence of Bi3+ was measurable in NaYGeO4:0.01Bi3+ due to electron release from Bi2+ and recombination with a hole at Bi4+. The charge carrier storage capacity in NaYGeO4:0.01Bi3+ was discovered to increase ~7 times via optimizing synthesis condition at 1200 °C during 24 h. The thermoluminescence (TL) intensity of the optimized NaYGeO4:0.001Bi3+ and NaYGeO4:0.01Bi3+,0.001Eu3+ is ~3, and ~7 times higher than the TL of the state-of-the-art X-ray storage phosphor BaFBr(I):Eu. Proof-of-concept color tuning for anti-counterfeiting application was demonstrated by combining the discovered and optimized NaYGeO4:0.01Bi3+ afterglow phosphor with perovskite CsPbBr3 and CdSe quantum dots. Information storage application was demonstrated by UV-light- or X-ray-charged NaYGeO4:0.01Bi3+,0.001Eu3+ phosphor dispersed in a silicone gel imaging film. This work not only reports excellent storage phosphors but more importantly provides a design principle that can initiate more exploration of afterglow and storage phosphors in a designed way through combining VRBE-scheme-guided band structure engineering and crystal synthesis optimization.



https://blog.sciencenet.cn/blog-497509-1220353.html

上一篇:理性设计Nd3+1.06um的近红外长余辉材料
下一篇:如何利用真空标度(VRBE)能级图理性设计与探索长余辉发光与光存储材料
收藏 IP: 131.180.38.*| 热度|

0

该博文允许注册用户评论 请点击登录 评论 (0 个评论)

数据加载中...
扫一扫,分享此博文

Archiver|手机版|科学网 ( 京ICP备07017567号-12 )

GMT+8, 2024-2-26 05:21

Powered by ScienceNet.cn

Copyright © 2007- 中国科学报社

返回顶部