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美《应用物理快报》创刊50年来顶级引用论文53篇,香港上一篇

已有 12217 次阅读 2012-3-14 23:18 |个人分类:高技术与经济|系统分类:论文交流| 论文, Journal, Scientific, trends, published

第一期的Applied Physics Letters出版于1962年9月。第一年两周一期,每期发表大概8篇论文。到2011年,每周一期发表论文85篇左右。2012年是该刊创刊以来的第50周年,也就是第100卷。最近其网站上公布了创刊以来引用次数前50名的论文,共53篇,详细见下,中国只有一篇上榜:来自香港科技大学的汤子康团队(第33篇)

有些工作还是非常经典的:如有机发光二极管(第1篇),多孔硅(第2篇),双异质结蓝光二极管(第6篇),高分子发光二极管(第9篇)等等。


Top 50 Most Cited Papers from 50 Years of Applied Physics Letters

1. Organic electroluminescent diodes 
C. W. Tang and S. A. VanSlyke 
Appl. Phys. Lett. 51, 913 (1987)

2. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
L. T. Canham
Appl. Phys. Lett. 57, 1046 (1990)

3. Vapor-liquid-solid mechanism of single crystal growth
R. S. Wagner and W. C. Ellis
Appl. Phys. Lett. 4, 89 (1964)

4. Electronic analog of the electro-optic modulator 
Supriyo Datta and Biswajit Das
Appl. Phys. Lett. 56, 665 (1990)

5. Multidimensional quantum well laser and temperature dependence of its threshold current
Y. Arakawa and H. Sakaki
Appl. Phys. Lett. 40, 939 (1982)

6. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Shuji Nakamura, Takashi Mukai, and Masayuki Senoh 
Appl. Phys. Lett. 64, 1687 (1994)

7. Submicrosecond bistable electro‐optic switching in liquid
Noel A. Clark and Sven T. Lagerwall
Appl. Phys. Lett. 36, 899 (1980)

8. A highly processable metallic glass: Zr41.2Ti13.8Cu12.5Ni10.0Be22.5
A. Peker and W. L. Johnson
Appl. Phys. Lett. 63, 2342 (1993)

9. Visible light emission from semiconducting polymer diodes
D. Braun and A. J. Heeger
Appl. Phys. Lett. 58, 1982 (1991)

10. Reversible conductivity changes in discharge‐produced amorphous Si
D. L. Staebler and C. R. Wronski
Appl. Phys. Lett. 31, 292 (1977)

11. Tunneling in a finite superlattice
R. Tsu and L. Esaki
Appl. Phys. Lett. 22, 562 (1973)

12. Electronic structure of chiral graphene tubules
R. Saito, M. Fujita, G. Dresselhaus, and M. S Dresselhaus
Appl. Phys. Lett. 60, 2204 (1992)

13. Single- and multi-wall carbon nanotube field-effect transistors
R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris
Appl. Phys. Lett. 73, 2447 (1998)

14. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye
Appl. Phys. Lett. 69, 363 (1996)

15. Very high-efficiency green organic light-emitting devices based on electrophosphorescence
M. A. Baldo, S. Lamansky, P. E. Burrows, M. E. Thompson, and S. R. Forrest
Appl. Phys. Lett. 75, 4 (1999)

16. Two‐layer organic photovoltaic cell
C. W. Tang
Appl. Phys. Lett. 48, 183 (1986)

17. 2.5% efficient organic plastic solar cells
Sean E. Shaheen, Christoph J. Brabec, N. Serdar Sariciftci, Franz Padinger, Thomas Fromherz, and Jan C. Hummelen
Appl. Phys. Lett. 78, 841 (2001)

18. Optically pumped lasing of ZnO at room temperature
D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto
Appl. Phys. Lett. 70, 2230 (1997)

19. Imprint of sub‐25 nm vias and trenches in polymers
Stephen Y. Chou, Peter R. Krauss, and Preston J. Renstrom
Appl. Phys. Lett. 67, 3114 (1995)

20. Magnetic and electric properties of transition-metal-doped ZnO films
Kenji Ueda, Hitoshi Tabata, and Tomoji Kawai
Appl. Phys. Lett. 79, 988 (2001)

21. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
D. Leonard, M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff
Appl. Phys. Lett. 63, 3203 (1993)

22. Resonant tunneling in semiconductor double barriers
L. L. Chang, L. Esaki, and R. Tsu
Appl. Phys. Lett. 24, 593 (1974)

23. Optical stethoscopy: Image recording with resolution λ/20
D. W. Pohl, W. Denk, and M. Lanz
Appl. Phys. Lett. 44, 651 (1984)

24. Large magnetic‐field‐induced strains in Ni2MnGa single crystals
K. Ullakko, J. K. Huang, C. Kantner, R. C. O’Handley, and V. V. Kokorin
Appl. Phys. Lett. 69, 1966 (1996)

25. Blue‐green laser diodes
M. A. Haase, J. Qiu, J. M. DePuydt, and H. Cheng
Appl. Phys. Lett. 59, 1272 (1991)

26. Transmission of stationary nonlinear optical pulses in dispersive dielectric fibers. I. Anomalous dispersion
Akira Hasegawa and Frederick Tappert
Appl. Phys. Lett. 23, 142 (1973)

27. A silicon nanocrystals based memory
Sandip Tiwari, Farhan Rana, Hussein Hanafi, Allan Hartstein, Emmanuel F. Crabbé, and Kevin Chan
Appl. Phys. Lett. 68, 1377 (1996)

28. Magnetoresistance in magnetic manganese oxide with intrinsic antiferromagnetic spin structure
Ken‐ichi Chahara, Toshiyuki Ohno, Masahiro Kasai, and Yuzoo Kozono
Appl. Phys. Lett. 63, 1990 (1993)

29. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
R. People and J. C. Bean
Appl. Phys. Lett. 47, 322 (1985)

30. Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode
L. S. Hung, C. W. Tang, and M. G. Mason
Appl. Phys. Lett. 70, 152 (1997)

31. Load transfer and deformation mechanisms in carbon nanotube-polystyrene composites
D. Qian, E. C. Dickey, R. Andrews, and T. Rantell
Appl. Phys. Lett. 76, 2868 (2000)

32. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda
Appl. Phys. Lett. 48, 353 (1986)

33. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa
Appl. Phys. Lett. 72, 3270 (1998) 引用1365次。

34. Ideal hydrogen termination of the Si (111) surface
G. S. Higashi, Y. J. Chabal, G. W. Trucks, and Krishnan Raghavachari
Appl. Phys. Lett. 56, 656 (1990)

35. Organic electroluminescent devices with improved stability
S. A. Van Slyke, C. H. Chen, and C. W. Tang
Appl. Phys. Lett. 69, 2160 (1996)

36. Fully sealed, high-brightness carbon-nanotube field-emission display
W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N. S. Lee, G. S. Park, and J. M. Kim
Appl. Phys. Lett. 75, 3129 (1999)

37. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura
Appl. Phys. Lett. 69, 4188 (1996)

38. Unusual properties of the fundamental band gap of InN
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, Hai Lu, William J. Schaff, Yoshiki Saito, and Yasushi Nanishi
Appl. Phys. Lett. 80, 3967 (2002)

39. Formation of dispersions using “flow focusing” in microchannels
Shelley L. Anna, Nathalie Bontoux, and Howard A. Stone
Appl. Phys. Lett. 82, 364 (2003)

40. Current‐voltage characteristics of Josephson junctions
W. C. Stewart
Appl. Phys. Lett. 12, 277 (1968)

41. Features of gold having micrometer to centimeter dimensions can be formed through a combination of stamping
with an elastomeric stamp and an alkanethiol ‘‘ink’’ followed by chemical etching
Amit Kumar and George M. Whitesides
Appl. Phys. Lett. 63, 2002 (1993)

42. Field controlled light scattering from nematic microdroplets
J. W. Doane, N. A. Vaz, B.‐G. Wu, and S. Žumer
Appl. Phys. Lett. 48, 269 (1986)

43. Kelvin probe force microscopy
M. Nonnenmacher, M. P. O’Boyle, and H. K. Wickramasinghe
Appl. Phys. Lett. 58, 2921 (1991)

44. Porous silicon formation: A quantum wire effect
V. Lehmann and U. Gösele
Appl. Phys. Lett. 58, 856 (1991)

45. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell
Appl. Phys. Lett. 81, 1830 (2002)

46. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André, and O. Vatel
Appl. Phys. Lett. 64, 196 (1994)

47. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
L. C. West and S. J. Eglash
Appl. Phys. Lett. 46, 1156 (1985)

48. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors
K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt
Appl. Phys. Lett. 68, 403 (1996)

49. Resonant tunneling through quantum wells at frequencies up to 2.5 THz
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D. Peck
Appl. Phys. Lett. 43, 588 (1983)

50. Whispering‐gallery mode microdisk lasers
S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan
Appl. Phys. Lett. 60, 289 (1992)

51. MgxZn1−xO as a II–VI widegap semiconductor alloy
A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa
Appl. Phys. Lett. 72, 2466 (1998)

52. Combined shear force and near‐field scanning optical microscopy
E. Betzig, P. L. Finn, and J. S. Weiner
Appl. Phys. Lett. 60, 2484 (1992)

53. Photosensitivity in optical fiber waveguides: Application to reflection filter fabrication
K. O. Hill, Y. Fujii, D. C. Johnson, and B. S. Kawasaki
Appl. Phys. Lett. 32, 647 (1978)




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