General Clean: 

General cleaning is accomplished by using a mixture of Sulfuric Acid and Hydrogen Peroxide. Mixing these chemicals is dangerous and generates extreme heat. This industry standard clean removes organic and inorganic contamination from the wafer. 2~10 minute clean is recommended. Strong rinse in DI water is required after this cleaning step.

Particle Removal: A Megasonic clean (at about 70 C) in a 5:1:1 ratio mixture of DI water: Ammonium Hydroxide : Hydrogen Peroxide will remove silica and silicon particles from the wafer, as well as remove certain organic and metal surface contamination. 2~10 minute clean is recommended. Strong rinse in DI water is required after this cleaning step.

Oxide Removal:

A 15~60 second dip in 1:20 HF:DI water will remove the native oxide layer and any contamination in the oxide from the wafer surface. HF is extremely dangerous and must be handled with great care. Strong rinse in DI water is required after this cleaning step.

Metal Contamination Removal:

A Megasonic clean (at about 70 C) in a 6:1:1 ratio mixture of DI water: HCl : Hydrogen Peroxide will remove certain ionic and metal surface contamination. 2~10 minute clean is recommended. Strong rinse in DI water is required after this cleaning step.

Spin Rinse Dry:

Wafers should be rinsed and dried in a standard spin-rinse dryer.