D-band 0.14THz Micromachined Silicon Rectangular Waveguide Filter

X.H.ZHAO, J.F.BAO, G.C.SHAN^*, Y.J.DU, Y.B.ZHENG, Y.WEN, C.H.SHEK

This paper appears in:
Microwave and Wireless Components Letters, IEEE
Date of Publication: May 2012
Author(s): Zhao, X. H.    Bao, J. F. ; Shan, G. C. ; Du, Y. J. ; Zheng, Y. B. ; Wen, Y. ; Shek, C. H.      

  Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang Sichuan, China

 Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China
Volume: 22, Issue: 5
On Page(s): 230 - 232            

Abstract—The 0.14THz silicon micromachined bandpass rectangular waveguide filters are firstly fabricated by the deep reactive ion etching (DRIE) processes for submillimeter wave applications. The filter circuit structure is once-formed using the ICP reactive ion etcher to etch through the full thickness of the silicon wafer, and then bonded together with the two metallized glass covers to form the waveguide cavity. The measured lowest insertion losses are lower than 0.5 dB. The unloaded quality factor can reach 160. It demonstrates a successful and practical way to fabricate these types of waveguide filters.

Index Terms - Micromachining, RF MEMS, microwave Filter, terahertz (THz), rectangular waveguide