Special Topic on Compound Semiconductor Materials and Devices on Si

J. Semicond. Volume 40, Number 10 October 2019

Miniaturizing spectrometers to nanoscale

Baicheng Yao

J. Semicond. 2019, 40(10): 100201

doi: 10.1088/1674-4926/40/10/100201

Mid-infrared lasers on silicon operating close to room temperature

Hongtao Lin

J. Semicond. 2019, 40(10): 100202

doi: 10.1088/1674-4926/40/10/100202

Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward

Xinlun Cai

J. Semicond. 2019, 40(10): 100301

Silicon polarization switch based on symmetric polarization splitter-rotators

Defen Guo, Kang Hou, Weijie Tang, Tao Chu

J. Semicond. 2019, 40(10): 100401

doi: 10.1088/1674-4926/40/10/100401

Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si

Huiyun Liu, Yikai Su, Chuanbo Li, Xuhan Guo

J. Semicond. 2019, 40(10): 100101

doi: 10.1088/1674-4926/40/10/100101

III–V ternary nanowires on Si substrates: growth, characterization and device applications

Giorgos Boras, Xuezhe Yu, Huiyun Liu

J. Semicond. 2019, 40(10): 101301

doi: 10.1088/1674-4926/40/10/101301

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

Shujie Pan, Victoria Cao, Mengya Liao, Ying Lu, Zizhuo Liu, Mingchu Tang, Siming Chen, Alwyn Seeds, Huiyun Liu

J. Semicond. 2019, 40(10): 101302

doi: 10.1088/1674-4926/40/10/101302

Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates

Wenqi Wei, Qi Feng, Zihao Wang, Ting Wang, Jianjun Zhang

J. Semicond. 2019, 40(10): 101303

doi: 10.1088/1674-4926/40/10/101303

Recent advances of heterogeneously integrated III–V laser on Si

Xuhan Guo, An He, Yikai Su

J. Semicond. 2019, 40(10): 101304

doi: 10.1088/1674-4926/40/10/101304

III–V compound materials and lasers on silicon

Wenyu Yang, Yajie Li, Fangyuan Meng, Hongyan Yu, Mengqi Wang, Pengfei Wang, Guangzhen Luo, Xuliang Zhou, Jiaoqing Pan

J. Semicond. 2019, 40(10): 101305

doi: 10.1088/1674-4926/40/10/101305

Dynamics of InAs/GaAs quantum dot lasers epitaxially grown on Ge or Si substrate

Cheng Wang, Yueguang Zhou

J. Semicond. 2019, 40(10): 101306

doi: 10.1088/1674-4926/40/10/101306

Jun Hu, Hongyuan Wei, Shaoyan Yang, Chengming Li, Huijie Li, Xianglin Liu, Lianshan Wang, Zhanguo Wang

J. Semicond. 2019, 40(10): 101801

Size effect on optical performance of blue light-emitting diodes

Chang Ge, Jing Li, Guohong Wang, Kang Su, Xingdong Lu

J. Semicond. 2019, 40(10): 102301

doi: 10.1088/1674-4926/40/10/102301

Simulation of structural design with high coupling efficiency in external cavity semiconductor laser

Yangjie Zhang, Wentao Guo, Di Xiong, Xiaofeng Guo, Wenyuan Liao, Haifeng Liu, Weihua Liu, Manqing Tan

J. Semicond. 2019, 40(10): 102302

doi: 10.1088/1674-4926/40/10/102302

Preparation and characterization of AlN seeds for homogeneous growth

Li Zhang, Haitao Qi, Hongjuan Cheng, Lei Jin, Yuezeng Shi

J. Semicond. 2019, 40(10): 102801