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J. Semicond. Volume 40, Number 9 September 2019
Cross-dimensional electron–phonon coupling
Jun Zhang
J. Semicond. 2019, 40(9): 090201
doi: 10.1088/1674-4926/40/9/090201
Major scientific accomplishments of Prof. Kun Huang
Jianbai Xia
J. Semicond. 2019, 40(9): 090301
doi: 10.1088/1674-4926/40/9/090301
Exciton–polaritons in semiconductors
Qing Zhang, Xinfeng Liu
J. Semicond. 2019, 40(9): 090401
doi: 10.1088/1674-4926/40/9/090401
Preface to the Special Issue on A Celebration of the 100th Birthday of Prof. Kun Huang
J. Semicond. 2019, 40(9): 090101
doi: 10.1088/1674-4926/40/9/090101
On the applicability of adiabatic approximation in multiphonon recombination theory
Kun Huang
J. Semicond. 2019, 40(9): 090102
doi: 10.1088/1674-4926/40/9/090102
Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure
Xin Cong, Miaoling Lin, Ping-Heng Tan
J. Semicond. 2019, 40(9): 091001
doi: 10.1088/1674-4926/40/9/091001
Reducing the power consumption of two-dimensional logic transistors
Weisheng Li, Hongkai Ning, Zhihao Yu, Yi Shi, Xinran Wang
J. Semicond. 2019, 40(9): 091002
doi: 10.1088/1674-4926/40/9/091002
Linwang Wang
J. Semicond. 2019, 40(9): 091101
doi: 10.1088/1674-4926/40/9/091101
Applications of Huang–Rhys theory in semiconductor optical spectroscopy
Yong Zhang
J. Semicond. 2019, 40(9): 091102
doi: 10.1088/1674-4926/40/9/091102
Broadband polarized photodetector based on p-BP/n-ReS2heterojunction
Wenkai Zhu, Xia Wei, Faguang Yan, Quanshan Lv, Ce Hu, Kaiyou Wang
J. Semicond. 2019, 40(9): 092001
doi: 10.1088/1674-4926/40/9/092001
A gate-free MoS2 phototransistor assisted by ferroelectrics
Shuaiqin Wu, Guangjian Wu, Xudong Wang, Yan Chen, Tie Lin, Hong Shen, Weida Hu, Xiangjian Meng, Jianlu Wang, Junhao Chu
J. Semicond. 2019, 40(9): 092002
doi: 10.1088/1674-4926/40/9/092002
Revisit of the band gaps of rutile SnO2 and TiO2: a first-principles study
Xuefen Cai, Peng Zhang, Su-Huai Wei
J. Semicond. 2019, 40(9): 092101
doi: 10.1088/1674-4926/40/9/092101
Giant modulation of magnetism in (Ga,Mn)As ultrathin films via electric field
Hailong Wang, Jialin Ma, Jianhua Zhao
J. Semicond. 2019, 40(9): 092501
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