Special Issue on 2D-Materials-Related Physical Properties and Optoelectronic Devices

J. Semicond. Volume 40, Number 6, June 2019

2D metamaterials coherently steer nonlinear valley photons of 2D semiconductor

Chuanbo Li, Ming Li

J. Semicond. 2019, 40(6): 060201

doi: doi: 10.1088/1674-4926/40/6/060201

Unique interfacial thermodynamics of few-layer 2D MoS

Zhijie Wang

J. Semicond. 2019, 40(6): 060202

doi: 10.1088/1674-4926/40/6/060202

Topological photodetection

Zhongming Wei

J. Semicond. 2019, 40(6): 060203

doi: 10.1088/1674-4926/40/6/060203

Heteroepitaxy of semiconductor thin films

Yi Gu

J. Semicond. 2019, 40(6): 060401

doi: 10.1088/1674-4926/40/6/060401

Room-temperature stable two-dimensional ferroelectric materials

Lun Dai

J. Semicond. 2019, 40(6): 060402

doi: 10.1088/1674-4926/40/6/060402

Preface to the Special Issue on 2D-Materials-Related Physical Properties and Optoelectronic Devices

Ping-Heng Tan, Lijun Zhang, Lun Dai, Shuyun Zhou

J. Semicond. 2019, 40(6): 060101

doi: 10.1088/1674-4926/40/6/060101

Optical and electrical properties of two-dimensional anisotropic materials

Ziqi Zhou, Yu Cui, Ping-Heng Tan, Xuelu Liu, Zhongming Wei

J. Semicond. 2019, 40(6): 061001

doi: 10.1088/1674-4926/40/6/061001

Atomically thin α-In₂Se₃: an emergent two-dimensional room temperature ferroelectric semiconductor

Yue Li, Ming Gong, Hualing Zeng

J. Semicond. 2019, 40(6): 061002

doi: 10.1088/1674-4926/40/6/061002

Synthesis, properties, and applications of large-scale two-dimensional materials by polymer-assisted deposition

Hongtao Ren, Yachao Liu, Lei Zhang, Kai Liu

J. Semicond. 2019, 40(6): 061003

doi: 10.1088/1674-4926/40/6/061003

Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene

Naili Yue, Joshua Myers, Liqin Su, Wentao Wang, Fude Liu, Raphael Tsu, Yan Zhuang, Yong Zhang

J. Semicond. 2019, 40(6): 062001

doi: 10.1088/1674-4926/40/6/062001

Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrödinger's equation

Endi Suhendi, Lilik Hasanah, Dadi Rusdiana, Fatimah A. Noor, Neny Kurniasih, Khairurrijal

J. Semicond. 2019, 40(6): 062002

doi: 10.1088/1674-4926/40/6/062002

Bilayer tellurene–metal interfaces

Hua Pang, Jiahuan Yan, Jie Yang, Shiqi Liu, Yuanyuan Pan, Xiuying Zhang, Bowen Shi, Hao Tang, Jinbo Yang, Qihang Liu, Lianqiang Xu, Yangyang Wang, Jing Lv

J. Semicond. 2019, 40(6): 062003

doi: 10.1088/1674-4926/40/6/062003

Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations

Pengxiang Bai, Shiying Guo, Shengli Zhang, Hengze Qu, Wenhan Zhou, Haibo Zeng

J. Semicond. 2019, 40(6): 062004

doi: 10.1088/1674-4926/40/6/062004

Substrates and interlayer coupling effects on Mo_1−xW_xSe₂ alloys

Fang Liang, Hejun Xu, Zuoyuan Dong, Yafeng Xie, Chen Luo, Yin Xia, Jian Zhang, Jun Wang, Xing Wu

J. Semicond. 2019, 40(6): 062005

doi: 10.1088/1674-4926/40/6/062005

Broadband absorption of graphene from magnetic dipole resonances in hybrid nanostructure

Xiaowei Jiang

J. Semicond. 2019, 40(6): 062006

doi: 10.1088/1674-4926/40/6/062006