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[小资料] 1926年利林费尔德(Julius Edgar Lilienfeld)的场效应半导体专利(图片)

已有 2290 次阅读 2023-9-1 18:22 |个人分类:集成电路(资料)|系统分类:科研笔记

[小资料] 1926年利林费尔德(Julius Edgar Lilienfeld)的场效应半导体专利(图片)

                                

Julius E. Lilienfeld, passport photo   1926-1-1.jpg

利林费尔德 Julius Edgar Lilienfeld, 1882-04-18 ~ 1963-08-28

https://images.computerhistory.org/siliconengine/1926-1-1.jpg

https://www.computerhistory.org/siliconengine/field-effect-semiconductor-device-concepts-patented/

                                                                                                      

一、场效应管:从概念构想到实用芯片,经历了 38年时间

   场效应管,特别是 CMOS(互补金属氧化物半导体,complementary metal-oxide-semiconductor),至少在今后的 5年(10年)里,还是制造芯片的主流。其他的新技术可以与 CMOS 混合使用以提高性能、降低功耗或降低价格。(宋继强,2019

   与结型晶体管不同,场效应管的第一个专利,1926-10-08 由利林菲尔德(Julius Edgar Lilienfeld)申请,1930-01-28 授权。1964年,在 Frank Marion Wanlass 等人不断努力下,场效应管 CMOS 开始商业化,其间经历了漫长的 38年。

   还好,只有 38年。

   如果说肖克莱发明了“坚持管”(结型晶体管,现代晶体管的正宗始祖),Wanlass CMOS 也应该是“坚持管”了。

   按照场效应管的历史,采用简单的类比,可以推断“半电路、半电磁场”电路将在 2033 年商业化。只要在等 10年就行。关键是要有新的 Wanlass 和萨支唐(Chih-Tang Sah)。说不定,某些人已经在悄悄地研制“路管”合一的新电路了。或许明年(2024年)之前他们会公布硬件。

   当然,我真的没有研制具体的“路管”合一的新电路。我只是进行相关的理论探索,并结合“电磁学的实验再检验”进行。我的主要兴趣是电磁学的奥秘:物理学里的电磁学,经典电磁理论的现代再验证。但是,万一有人强迫我具体研制“路管”合一的新电路,列位看官大人,您们说我是“拒绝”,还是“答应”呢?

          

   在美国工程技术界评出二十世纪最伟大的 20项工程技术成就“Electronics 电子技术”时间表里,《1962 MOSFET is invented 1962年 发明MOSFET》内容如下:

1962 MOSFET is invented

   The metal oxide semiconductor field effect transistor (MOSFET) is invented by engineers Steven Hofstein and Frederic Heiman at RCA's research laboratory in Princeton, New Jersey. Although slower than a bipolar junction transistor, a MOSFET is smaller and cheaper and uses less power, allowing greater numbers of transistors to be crammed together before a heat problem arises. Most microprocessors are made up of MOSFETs, which are also widely used in switching applications.

1962年 发明MOSFET

   金属氧化物半导体场效应晶体管(MOSFET)是由工程师 Steven Hofstein 和 Frederic Heiman 在 RCA 位于新泽西州普林斯顿的研究实验室发明的。尽管 MOSFET 比双极结晶体管慢,但它更小、更便宜、功耗更低,可以在出现热问题之前将更多数量的晶体管挤在一起。大多数微处理器由 MOSFET 组成,MOSFET 也广泛用于开关应用。

http://www.greatachievements.org/?id=3956  

   《1966 Self-aligned gate process for fabricating field effect transistors 1966年 用于制造场效应晶体管的自对准栅极工艺》内容如下:

1966 Self-aligned gate process for fabricating field effect transistors

   In 1966 Dr. Robert W. Bower invents the self-aligned gate process for fabricating field effect transistors, providing the foundation for later developments establishing the core technology for the fabrication of high performance MOS integrated circuits.

1966年 用于制造场效应晶体管的自对准栅极工艺

   1966年,Robert W.Bower博士发明了用于制造场效应晶体管的自对准栅极工艺,为后来的发展奠定了基础,为制造高性能MOS集成电路的核心技术奠定了基础。

http://www.greatachievements.org/?id=3956

                                                                                                                                

二、1926年利林菲尔德申请的美国专利《Method and apparatus for controlling electric currents 用于控制电流的方法和装置》

                                   

CHM, Computer History Museum

RESOURCES

CLASSIC SEMICONDUCTOR PAPERS AND PATENTS

里,有利林菲尔德 1926-10-08 申请,1930-01-28 授权的场效应管概念的专利《Method and apparatus for controlling electric currents 用于控制电流的方法和装置》:

1926 - Lilienfeld's patent for a "transistor" amplifier

"Method and apparatus for controlling electric currents" (U.S. Patent 1,745,175; Filed October 8, 1926)

http://s3.computerhistory.org/siliconengine/lilienfeld-us1745175a-patent.pdf

https://www.computerhistory.org/siliconengine/resources/

           

图片形式如下:

CHM      lilienfeld-us1745175a-patent_页面_1.png

(1)

CHM      lilienfeld-us1745175a-patent_页面_2.png

(2)

CHM      lilienfeld-us1745175a-patent_页面_3.png

(3)

CHM      lilienfeld-us1745175a-patent_页面_4.png

(4)

                              

参考资料:

[1] 宋继强. 智能时代的芯片技术演进[J]. 科技导报, 2019, 37(3): 66-68.

doi:  10.3981/j.issn.1000-7857.2019.03.010

http://www.kjdb.org/CN/abstract/abstract15236.shtml

   Intel得出的结论是,CMOS功耗和性能表现要优于大部分半导体元器件。至少在最近的10年里,还是要以CMOS为主来制造芯片,其他的新技术可以与CMOS混合使用以提高性能、降低功耗或降低价格。

[2] 宋德生. 信息革命的技术源流[M]. 成都: 四川人民出版社, 1986-04.

[3] 2023-08-01,场效应晶体管/field effect transistor/邓先灿,中国大百科全书,第三版网络版[DB/OL]

https://www.zgbk.com/ecph/words?SiteID=1&ID=62929&Type=bkzyb&SubID=80584

[4] 2023-06-01,场效应半导体电极/field-effect transistor semiconductor electrode/张学记,中国大百科全书,第三版网络版[DB/OL]

https://www.zgbk.com/ecph/words?SiteID=1&ID=17917&Type=bkzyb&SubID=62129

[5] 1926 - Lilienfeld's patent for a "transistor" amplifier

"Method and apparatus for controlling electric currents" (U.S. Patent 1,745,175; Filed October 8, 1926)

http://s3.computerhistory.org/siliconengine/lilienfeld-us1745175a-patent.pdf

[6] RESOURCES, Computer History Museum

https://www.computerhistory.org/siliconengine/resources/

[7] 1926: FIELD EFFECT SEMICONDUCTOR DEVICE CONCEPTS PATENTED

JULIUS LILIENFELD FILES A PATENT DESCRIBING A THREE-ELECTRODE AMPLIFYING DEVICE BASED ON THE SEMICONDUCTING PROPERTIES OF COPPER SULFIDE. ATTEMPTS TO BUILD SUCH A DEVICE CONTINUE THROUGH THE 1930S.

https://www.computerhistory.org/siliconengine/field-effect-semiconductor-device-concepts-patented/

[8] TIMELINE, Computer History Museum

https://www.computerhistory.org/siliconengine/timeline/  

[9] 美国国家工程院. Greatest Engineering Achievements of the Twentieth Century [EB/OL]. 

http://www.greatachievements.org/

[10] Electronics Timeline, the 20th century's greatest engineering achievements

http://www.greatachievements.org/?id=3956

1962 MOSFET is invented

   The metal oxide semiconductor field effect transistor (MOSFET) is invented by engineers Steven Hofstein and Frederic Heiman at RCA's research laboratory in Princeton, New Jersey. Although slower than a bipolar junction transistor, a MOSFET is smaller and cheaper and uses less power, allowing greater numbers of transistors to be crammed together before a heat problem arises. Most microprocessors are made up of MOSFETs, which are also widely used in switching applications.

[11] Christian Kleint. Julius Edgar Lilienfeld: Life and profession [J]. Progress in Surface Science, 1998, 57(4): 253-327.  April 1998,

doi:  10.1016/S0079-6816(98)80026-9

https://www.sciencedirect.com/science/article/pii/S0079681698800269

[12] Steven Leibson, 2023-04-03, A Brief History of the MOS transistor, Part 1: Early Visionaries

https://www.eejournal.com/article/a-brief-history-of-the-mos-transistor-part-1-early-visionaries/

[13] Steven Leibson, 2023-04-05, A Brief History of the MOS transistor, Part 2: Fairchild – The Big Engine that Couldn’t

https://www.eejournal.com/article/a-brief-history-of-the-mos-transistor-part-2-fairchild-the-big-engine-that-couldnt/

[14] Steven Leibson, 2023-04-10, A Brief History of the MOS transistor, Part 3: Frank Wanlass – MOS Evangelist, Inventor of CMOS

https://www.eejournal.com/article/a-brief-history-of-the-mos-transistor-part-3-frank-wanlass-mos-evangelist-inventor-of-cmos/

[15] National Inventors Hall of Fame, Frank Wanlass, Complementary Metal Oxide Semiconductor (CMOS)

https://www.invent.org/inductees/frank-wanlass  

[16] Wei Cao, Huiming Bu, Maud Vinet, Min Cao, Shinichi Takagi, Sungwoo Hwang, Tahir Ghani, Kaustav Banerjee. The future transistors [J]. Nature, 2023, 620(7974): 501–515.   16 August 2023

doi:  10.1038/s41586-023-06145-x

https://www.nature.com/articles/s41586-023-06145-x

[17] Sah Chih-Tang (萨支唐). Evolution of the MOS transistor-from conception to VLSI [J]. Proceedings of the IEEE, 1988, 76(10): 1280 - 1326.   October 1988

doi:  10.1109/5.16328

https://ieeexplore.ieee.org/document/16328  

[18] Who Invented the Transistor? Computer History Museum, 2013-12-04, David Laws 

https://computerhistory.org/blog/who-invented-the-transistor/

                                           

相关链接:

[1] 2023-08-31,[小资料] 1949年肖克莱(William Bradford Shockley)的结型晶体管论文的引言(图片)和图片页

https://blog.sciencenet.cn/blog-107667-1401002.html

[2] 2023-08-30,[小资料] 1948年巴丁、布拉坦(Bardeen, Brattain)的点接触晶体管专利(图片)

https://blog.sciencenet.cn/blog-107667-1400907.html

[3] 2023-08-29,[小资料] 1959年霍尔尼(Jean Amedee Hoerni)的平面工艺专利(图片)

https://blog.sciencenet.cn/blog-107667-1400737.html

[4] 2023-08-28,[小资料] 1959年诺伊斯(Robert Norton Noyce)的集成电路专利(图片)

https://blog.sciencenet.cn/blog-107667-1400618.html

[5] 2023-08-27,[小资料] 1959年基尔比(Jack St. Clair Kilby)的集成电路专利(图片)

https://blog.sciencenet.cn/blog-107667-1400524.html

[6] 2023-08-21,[征求意见稿] “半电路、半电磁场”电路:目标和现状

https://blog.sciencenet.cn/blog-107667-1399839.html

[7] 2023-08-02,[小资料] 1952年杜默(G. W. A. Dummer)提出“集成电路概念 Integrated Circuit Concept”

https://blog.sciencenet.cn/blog-107667-1397631.html

[8] 2023-05-01,“五一”国际劳动节:真空管 → 晶体管、集成电路 → “半电路、半电磁场”电路 → ……

https://blog.sciencenet.cn/blog-107667-1386442.html

[9] 2019-07-17,[求助] 集成电路 Integrated Circuit 当前最新技术资料?

https://blog.sciencenet.cn/blog-107667-1189948.html

[10] 2019-07-14,有关集成电路 Integrated Circuit 的网页

https://blog.sciencenet.cn/blog-107667-1189467.html

[11] 2019-03-17,[建议] 关于集成电路中研制可变电阻的建议

https://blog.sciencenet.cn/blog-107667-1168144.html

[12] 2019-07-07,有关 Geoffrey W. A. Dummer 先生的网页

https://blog.sciencenet.cn/blog-107667-1188470.html

[13] 2019-07-13,有关 Mervin Joe Kelly 先生的网页

https://blog.sciencenet.cn/blog-107667-1189385.html

[14] 2019-07-01,[请教] 量子集成电路、量子芯片 Quantum Chip 今后30年内的实用前景?

https://blog.sciencenet.cn/blog-107667-1187623.html

[15] 2021-08-10,[求证] ASML 腾飞的技术原因是什么?【immersion system】

https://blog.sciencenet.cn/blog-107667-1299147.html

[16] 2022-09-24, 《信息革命的技术源流》第三轮阅读:创新真难!

https://blog.sciencenet.cn/blog-107667-1356669.html

                                                    

感谢您的指教!

感谢您指正以上任何错误!

感谢您提供更多的相关资料!



https://blog.sciencenet.cn/blog-107667-1401136.html

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