[小资料] 1959年诺伊斯（Robert Norton Noyce）的集成电路专利（图片）

诺伊斯 Robert Norton Noyce, 1927-12-12 ~ 1990-06-03

https://www.intel.com/content/dam/www/public/us/en/images/photography-business/RWD/a1131470-robert-noyce-1968-portrait-rwd.jpg.rendition.intel.web.1920.1080.jpg

https://www.intel.com/content/www/us/en/history/virtual-vault/articles/intels-founding.html

   大明星诺伊斯（硅谷之父？）的事迹很多。下面只是其中一些。

一、诺伊斯具有两次获得诺贝尔奖的科技实力

（1） 1956-08-14 构想出“negativeresistance diode 负电阻二极管”。可惜未能制作成。传闻是老板肖克莱（William Shockley）不让他做。

   同时，江崎玲于奈（Leo Esaki）做出了“隧道二极管 tunnel diode”，并以此获得 1973年诺贝尔物理学奖。

https://www.nobelprize.org/prizes/physics/1973/summary/

https://www.nobelprize.org/prizes/physics/1973/esaki/facts/

（2）1959年发明集成电路。

   基尔比（Jack St. Clair Kilby）因此获得 2000年诺贝尔物理学奖。

   但是，诺伊斯获得了 1979年美国“国家科学奖章”、“国家技术与创新奖章”等重要奖项。

1979 The National Medal of Science

   Intel's co-founders have been accorded some of the highest honors given in the United States. In 1979, U.S. President Jimmy Carter awarded Bob Noyce the National Medal of Science for his contributions to the invention of the integrated circuit.

1979 国家科学奖章

   英特尔的联合创始人获得了美国最高的荣誉。1979年，美国总统吉米·卡特授予鲍勃·诺伊斯国家科学奖章，以表彰他对集成电路发明的贡献。

https://timeline.intel.com/1979/the-national-medal-of-science

Robert N. Noyce

1979 National Medal of Technology and Innovation

Engineering

   For contributions to a variety of semiconductor devices, but especially for the integrated circuit, the cornerstone of modern electronics.

1979 国家技术与创新奖章

工程

   为各种半导体器件做出贡献，尤其是为集成电路，现代电子的基石。

https://nationalmedals.org/laureate/robert-n-noyce-2/

二、诺伊斯和戈登·摩尔（Gordon Moore）：Intel 公司创始人，1968-07-18

   戈登·摩尔（Gordon Moore）在 1965年提出著名的“摩尔定律 Moore’s law”：每个硅片（芯片）的晶体管数量每年翻一番。之后有各种的修改版。

   仙童半导体公司（Fairchild Semiconductor），是 1957-09-19 以诺伊斯为首的“八叛逆 Traitorous Eight”创立的公司。

   “八叛逆 Traitorous Eight”名单：罗伯特·诺伊斯（Robert Noyce）、戈登·摩尔（Gordon Moore）、布兰克（Julius Blank）、克莱尔（Eugene Kleiner）、赫尔尼（Jean Hoerni）、拉斯特（Jay Last）、罗伯茨（Sheldon Roberts）和格里尼克（Victor Grinich）。他们年龄在 28岁至 34岁之间。

   这八人对老板肖克莱不满意，算是集体辞职。被老板肖克莱骂做“八叛逆”。

图1  1957年“八叛逆 Traitorous eight”在仙童公司的合影。左起分别为 Gordon Moore，C. Sheldon Roberts，Eugene Kleiner，Robert Noyce，Victor Grinich，Julius Blank，Jean Hoerni，Jay Last

https://www-tc.pbs.org/wgbh/americanexperience/media/gallery_images/Silicon-Gallery-3-RN2866m.jpg

https://www.pbs.org/wgbh/americanexperience/features/silicon/

   据说“诺伊斯对员工过于仁慈，不愿意解雇员工”。求英文出处。

三、1959年诺伊斯申请的专利《Semiconductor device-and-lead structure 半导体器件和引线结构》

CHM, Computer History Museum

的

RESOURCES

CLASSIC SEMICONDUCTOR PAPERS AND PATENTS

里，有诺伊斯 1959-07-30 申请，1961-04-25 授权的发明集成电路的专利《Semiconductor device-and-lead structure 半导体器件和引线结构》：

1959 - Noyce's patent on improved structures for making electrical connections

"Semiconductor device-and-lead structure" (U.S. Patent 2,981,877; Filed July 30, 1959)

http://s3.computerhistory.org/siliconengine/noyce-us2981877-patent.pdf  

https://www.computerhistory.org/siliconengine/resources/

图片形式如下：

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参考资料：

[1] Robert Noyce, American engineer, britannica

https://www.britannica.com/biography/Robert-Noyce

[2] Robert Noyce, Meet Intel's co-founder and the co-inventor of the integrated circuit. INTEL

https://www.intel.com/content/www/us/en/history/museum-robert-noyce.html

[3] History Computer Staff, 2023-07-31, Robert Noyce – Complete Biography, History and Inventions

https://history-computer.com/robert-noyce-complete-biography/

[4] Intel's Founding, July 18, 1968, INTEL

https://www.intel.com/content/www/us/en/history/virtual-vault/articles/intels-founding.html

[5] L. Berlin; C. Casey. Robert Noyce and the tunnel diode [J].  IEEE Spectrum ( Volume: 42, Issue: 5, May 2005): 49-53.

doi:  10.1109/MSPEC.2005.1426971 

https://ieeexplore.ieee.org/document/1426971/authors#authors

   This paper claims that Robert N. Noyce, co-founder of Intel Corp., was the inventor of the tunnel diode even as Leo Esaki received the 1973 Nobel Prize in physics for the achievement. When Esaki, then a 49-year old semiconductor research scientist at IBM Corp., won his Nobel Prize, neither he nor the Nobel committee had any idea about Noyce's work. 

   这篇论文声称，英特尔公司的联合创始人Robert N.Noyce是隧道二极管的发明者，尽管Leo Esaki因其成就获得了1973年的诺贝尔物理学奖。当49岁的IBM公司半导体研究科学家Esaki获得诺贝尔奖时，他和诺贝尔委员会都不知道Noyce的工作。

[6] Bob Noyce, 1979, The National Medal of Science

https://timeline.intel.com/1979/the-national-medal-of-science

[7] Robert N. Noyce, 1979, National Medal of Technology and Innovation 

https://nationalmedals.org/laureate/robert-n-noyce-2/

[8] 1959 - Noyce's patent on improved structures for making electrical connections

"Semiconductor device-and-lead structure" (U.S. Patent 2,981,877; Filed July 30, 1959)

http://s3.computerhistory.org/siliconengine/noyce-us2981877-patent.pdf

[9] 美国国家工程院. Greatest Engineering Achievements of the Twentieth Century [EB/OL]. 

http://www.greatachievements.org/

[10] Electronics Timeline, the 20th century's greatest engineering achievements

http://www.greatachievements.org/?id=3956

   1958-1959 Integrated circuit invented

   Jack Kilby, an electrical engineer at Texas Instruments and Robert Noyce of Fairchild Semiconductor independently invent the integrated circuit. In September 1958, Kilby builds an integrated circuit that includes multiple components connected with gold wires on a tiny silicon chip, creating a "solid circuit." (On February 6, 1959, a patent is issued to TI for "miniaturized electronic circuits.") In January 1959, Noyce develops his integrated circuit using the process of planar technology, developed by a colleague, Jean Hoerni. Instead of connecting individual circuits with gold wires, Noyce uses vapor-deposited metal connections, a method that allows for miniaturization and mass production. Noyce files a detailed patent on July 30, 1959.

[11] TIMELINE, Computer History Museum

https://www.computerhistory.org/siliconengine/timeline/  

[12] 1959: PRACTICAL MONOLITHIC INTEGRATED CIRCUIT CONCEPT PATENTED

ROBERT NOYCE BUILDS ON JEAN HOERNI'S PLANAR PROCESS TO PATENT A MONOLITHIC INTEGRATED CIRCUIT STRUCTURE THAT CAN BE MANUFACTURED IN HIGH VOLUME.

https://www.computerhistory.org/siliconengine/practical-monolithic-integrated-circuit-concept-patented/

相关链接：

[1] 2023-08-27，[小资料] 1959年基尔比（Jack St. Clair Kilby）的集成电路专利（图片）

https://blog.sciencenet.cn/blog-107667-1400524.html

[2] 2022-09-19，[？？？] 热血沸腾之后，更是“耗尽/耗干”后的无奈（关联资料“集成电路”，诺伊斯 Robert Noyce）

https://blog.sciencenet.cn/blog-107667-1356020.html

[3] 2023-08-02，[小资料] 1952年杜默（G. W. A. Dummer）提出“集成电路概念 Integrated Circuit Concept”

https://blog.sciencenet.cn/blog-107667-1397631.html

[4] 2023-05-01，“五一”国际劳动节：真空管 → 晶体管、集成电路 → “半电路、半电磁场”电路 → ……

https://blog.sciencenet.cn/blog-107667-1386442.html

[5] 2019-07-17，[求助] 集成电路 Integrated Circuit 当前最新技术资料？

https://blog.sciencenet.cn/blog-107667-1189948.html

[6] 2019-07-14，有关集成电路 Integrated Circuit 的网页

https://blog.sciencenet.cn/blog-107667-1189467.html

[7] 2019-03-17，[建议] 关于集成电路中研制可变电阻的建议

https://blog.sciencenet.cn/blog-107667-1168144.html

[8] 2019-07-07，有关 Geoffrey W. A. Dummer 先生的网页

https://blog.sciencenet.cn/blog-107667-1188470.html

[9] 2019-07-13，有关 Mervin Joe Kelly 先生的网页

https://blog.sciencenet.cn/blog-107667-1189385.html

[10] 2019-07-01，[请教] 量子集成电路、量子芯片 Quantum Chip 今后30年内的实用前景？

https://blog.sciencenet.cn/blog-107667-1187623.html

[11] 2021-08-10，[求证] ASML 腾飞的技术原因是什么？【immersion system】

https://blog.sciencenet.cn/blog-107667-1299147.html

[12] 2022-09-24, 《信息革命的技术源流》第三轮阅读：创新真难！

https://blog.sciencenet.cn/blog-107667-1356669.html

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