本实验组与华中科技大学的杨勇博士，美国威斯康辛大学的Junhong Chen博士，美国凯斯西储大学的Kehan Yu博士合作，共同撰写了关于PECVD技术制备垂直取向石墨烯的综述，于2013年6月发表于Nanoscale。垂直取向石墨烯具有站立式的开放式层间结构，在能源环境电子等领域体现出巨大的应用潜力。论文总结了目前关于该领域的主要研究动态，以及等离子体源和一系列生长条件对材料形貌结构的影响，并对该领域的挑战和未来工作进行了展望。请同行批评指正。

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Zheng Bo, Yong Yang, Junhong Chen, Kehan Yu, Jianhua Yan, Kefa Cen, 2013, Plasma-enhance chemical vapor deposition synthesis of vertically oriented graphene. Nanoscale.  5, 5180-5204. Review article。

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摘要：Vertically oriented graphene (VG) nanosheets have attracted growing interest for a wide range of applications, from energy storage, catalysis and field emission to gas sensing, due to their unique orientation, exposed sharp edges, non-stacking morphology, and huge surface-to-volume ratio. Plasma-enhanced chemical vapor deposition (PECVD) has emerged as a key method for VG synthesis; however,controllable growth of VG with desirable characteristics for specific applications remains a challenge.This paper attempts to summarize the state-of-the-art research on PECVD growth of VG nanosheets to provide guidelines on the design of plasma sources and operation parameters, and to offer a perspective on outstanding challenges that need to be overcome to enable commercial applications of VG. The review starts with an overview of various types of existing PECVD processes for VG growth, and then moves on to research on the influences of feedstock gas, temperature, and pressure on VG growth, substrate pretreatment, the growth of VG patterns on planar substrates, and VG growth on cylindrical and carbon nanotube (CNT) substrates. The review ends with a discussion on challenges and future directions for PECVD growth of VG.