标题: Isolation and characterization of few-layer black  phosphorus

作者: Castellanos-Gomez, A (Castellanos-Gomez, Andres);  Vicarelli, L (Vicarelli, Leonardo); Prada, E (Prada, Elsa); Island, JO  (Island, Joshua O.); Narasimha-Acharya, KL (Narasimha-Acharya, K. L.);  Blanter, SI (Blanter, Sofya I.); Groenendijk, DJ (Groenendijk, Dirk J.);  Buscema, M (Buscema, Michele); Steele, GA (Steele, Gary A.); Alvarez, JV  (Alvarez, J. V.); Zandbergen, HW (Zandbergen, Henny W.); Palacios, JJ  (Palacios, J. J.); van der Zant, HSJ (van der Zant, Herre S. J.)

来源出版物: 2D Materials  卷: 1  期: 2  文献号: 025001  DOI: 10.1088/2053-1583/1/2/025001  出版年: SEP 2014  

Web of Science 核心合集中的 "被引频次": 72

被引频次合计: 72

使用次数 (最近 180 天): 87

使用次数 (2013 年至今): 118

引用的参考文献数: 48

摘要: Isolation and characterization of mechanically exfoliated  black phosphorus flakes with a thickness down to two single-layers is  presented. A modification of the mechanical exfoliation method, which  provides higher yield of atomically thin flakes than conventional mechanical  exfoliation, has been developed. We present general guidelines to determine  the number of layers using optical microscopy, Raman spectroscopy and  transmission electron microscopy (TEM) in a fast and reliable way. Moreover,  we demonstrate that the exfoliated flakes are highly crystalline and that  they are stable even in free-standing form through Raman spectroscopy and TEM  measurements. A strong thickness dependence of the band structure is found by  density functional theory (DFT) calculations. The exciton binding energy,  within an effective mass approximation, is also calculated for different  number of layers. Our computational results for the optical gap are  consistent with preliminary photoluminescence results on thin flakes.  Finally, we study the environmental stability of black phosphorus flakes  finding that the flakes are very hydrophilic and that long term exposure to  air moisture etches black phosphorus away. Nonetheless, we demonstrate that  the aging of the flakes is slow enough to allow fabrication of field-effect  transistors with strong ambipolar behavior. DFT calculations also give us  insight into the water-induced changes of the structural and electronic  properties of black phosphorus.

作者关键词: black phosphorus; mechanical exfoliation; transmission  electron microscopy; density functional theory; band structure; exciton;  field-effect transistor

KeyWords Plus: FIELD-EFFECT  TRANSISTORS; AMORPHOUS PHOSPHORUS; GRAPHENE; SEMICONDUCTOR; PHOTOLUMINESCENCE;  SPECTROSCOPY; CRYSTALS; MOBILITY; RAMAN; MOS2

地址: [Castellanos-Gomez, Andres; Vicarelli, Leonardo;  Island, Joshua O.; Blanter, Sofya I.; Groenendijk, Dirk J.; Buscema, Michele;  Steele, Gary A.; Zandbergen, Henny W.; van der Zant, Herre S. J.] Delft Univ  Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands. 
 [Prada, Elsa; Narasimha-Acharya, K. L.; Alvarez, J. V.; Palacios, J. J.] Univ  Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera INC, Dept Fis Mat  Condensada, E-28049 Madrid, Spain. 
 [Prada, Elsa; Narasimha-Acharya, K. L.; Alvarez, J. V.; Palacios, J. J.] Univ  Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain.

通讯作者地址: Castellanos-Gomez, A (通讯作者),Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ  Delft, Netherlands.

电子邮件地址: a.castellanosgomez@tudelft.nl

ISSN: 2053-1583

1、标题: Gate tunable  quantum oscillations in air-stable and high mobility few-layer phosphorene  heterostructures

作者: Gillgren, N (Gillgren, Nathaniel); Wickramaratne, D  (Wickramaratne, Darshana); Shi, YM (Shi, Yanmeng); Espiritu, T (Espiritu,  Tim); Yang, JW (Yang, Jiawei); Hu, J (Hu, Jin); Wei, J (Wei, Jiang); Liu, X  (Liu, Xue); Mao, ZQ (Mao, Zhiqiang); Watanabe, K (Watanabe, Kenji);  Taniguchi, T (Taniguchi, Takashi); Bockrath, M (Bockrath, Marc); Barlas, Y  (Barlas, Yafis); Lake, RK (Lake, Roger K.); Lau, CN (Lau, Chun Ning)

来源出版物: 2D MATERIALS  卷: 2  期: 1  文献号: 011001  DOI: 10.1088/2053-1583/2/1/011001  出版年: MAR 2015  

Web of Science 核心合集中的 "被引频次": 12

被引频次合计: 12

使用次数 (最近 180 天): 28

使用次数 (2013 年至今): 28

引用的参考文献数: 41

摘要: As the only non-carbon elemental layered allotrope,  few-layer black phosphorus or phosphorene has emerged as a novel  two-dimensional (2D) semiconductor with both high bulk mobility and a band  gap. Here we report fabrication and transport measurements of  phosphorene-hexagonal BN(hBN) heterostructures with one-dimensional edge contacts.  These transistors are stable in ambient conditions for >300 h, and display  ambipolar behavior, a gate-dependent metal-insulator transition, and mobility  up to 4000 cm(2) V-1 s(-1). At low temperatures, we observe gate-tunable  Shubnikov de Haas magneto-oscillations and Zeeman splitting in magnetic field  with an estimated g-factor similar to 2. The cyclotron mass of few-layer  phosphorene (FLP) holes is determined to increase from 0.25 to 0.31 m(e) as  the Fermi level moves towards the valence band edge. Our results underscore  the potential of FLP as both a platform for novel 2D physics and an  electronic material for semiconductor applications.

作者关键词: black phosphorus; quantum oscillations; encapsulation

KeyWords Plus: BLACK PHOSPHORUS;  SINGLE-CRYSTALS; TRANSPORT; GRAPHENE; ELECTRONICS; EFFICIENCY; METALS; STRAIN

地址: [Gillgren, Nathaniel; Shi, Yanmeng; Espiritu, Tim;  Yang, Jiawei; Bockrath, Marc; Barlas, Yafis; Lau, Chun Ning] Univ Calif  Riverside, Dept Phys & Astron, Riverside, CA 92521 USA. 
 [Wickramaratne, Darshana; Barlas, Yafis; Lake, Roger K.] Univ Calif  Riverside, Dept Elect & Comp Engn, Riverside, CA 92521 USA. 
 [Hu, Jin; Wei, Jiang; Liu, Xue; Mao, Zhiqiang] Tulane Univ, Dept Phys &  Engn Phys, New Orleans, LA 70118 USA. 
 [Watanabe, Kenji; Taniguchi, Takashi] Natl Inst Mat Sci, Tsukuba, Ibaraki  3050044, Japan.

通讯作者地址: Gillgren, N (通讯作者),Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA.

电子邮件地址: lau@physics.ucr.edu

ISSN: 2053-1583

2、标题: Environmental instability of few-layer black phosphorus

作者: Island, JO (Island, Joshua O.); Steele, GA (Steele,  Gary A.); van der Zant, HSJ (van der Zant, Herre S. J.); Castellanos-Gomez, A  (Castellanos-Gomez, Andres)

来源出版物: 2D MATERIALS  卷: 2  期: 1  文献号: 011002  DOI: 10.1088/2053-1583/2/1/011002  出版年: MAR 2015  

Web of Science 核心合集中的 "被引频次": 13

被引频次合计: 13

使用次数 (最近 180 天): 62

使用次数 (2013 年至今): 62

引用的参考文献数: 33

摘要: We study the environmental instability of mechanically  exfoliated few-layer black phosphorus (BP). From continuous measurements of  flake topography over several days, we observe an increase of over 200% in  volume due to the condensation of moisture from air. We find that long term  exposure to ambient conditions results in a layer-by-layer etching process of  BP flakes. Interestingly, flakes can be etched down to single layer  (phosphorene) thicknesses. BP's strong affinity for water greatly modifies  the performance of fabricated field-effect transistors (FETs) measured in  ambient conditions. Upon exposure to air, we differentiate between two  timescales for changes in BP FET transfer characteristics: a short timescale  (minutes) in which a shift in the threshold voltage occurs due to physisorbed  oxygen and nitrogen, and a long timescale (hours) in which strong p-type  doping occurs from water absorption. Continuous measurements of BP FETs in  air reveal eventual degradation and break-down of the channel material after  several days due to the layer-by-layer etching process.

作者关键词: black phosphorus; degradation; environmental stability;  oxygen; nitrogen; water

KeyWords Plus: FIELD-EFFECT  TRANSISTORS; MOBILITY; GRAPHENE; DEFECTS

地址: [Island, Joshua O.; Steele, Gary A.; van der Zant, Herre  S. J.; Castellanos-Gomez, Andres] Delft Univ Technol, Kavli Inst Nanosci,  NL-2628 CJ Delft, Netherlands.

通讯作者地址: Island, JO (通讯作者),Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ  Delft, Netherlands.

电子邮件地址: j.o.island@tudelft.nl; a.castellanosgomez@tudelft.nl

ISSN: 2053-1583