博文
半导体学报2020年第3期目次
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J. Semicond. Volume 41, Number 3, March 2020
RESEARCH HIGHLIGHTS Jun Zhang J. Semicond. 2020, 41(3): 030201 ARTICLESObservation of exciton polariton condensation in a perovskite lattice at room temperature
Epitaxial graphene gas sensors on SiC substrate with high sensitivity
Cui Yu, Qingbin Liu, Zezhao He, Xuedong Gao, Enxiu Wu, Jianchao Guo, Chuangjie Zhou,Zhihong Feng
J. Semicond. 2020, 41(3): 032101
Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu J. Semicond. 2020, 41(3): 032102 S. J. Mukhopadhyay, Prajukta Mukherjee, Aritra Acharyya, Monojit Mitra J. Semicond. 2020, 41(3): 032103 He Li, Menglin Huang, Shiyou Chen J. Semicond. 2020, 41(3): 032104 Feifan Xu, Xu Cen, Bin Liu, Danbei Wang, Tao Tao, Ting Zhi, Qi Wang, Zili Xie, Yugang Zhou,Youdou Zheng, Rong Zhang J. Semicond. 2020, 41(3): 032301Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPATT diodes
First-principles exploration of defect-pairs in GaN
Qiaoli Liu, Yajie Feng, Huijun Tian, Xiaoying He, Anqi Hu, Xia Guo J. Semicond. 2020, 41(3): 032302
P. Satapathy, A. Pfuch, R. Grunwald, S. K. Das J. Semicond. 2020, 41(3): 032303
Yaoping Xiao, Yu Liu, Yiming Zhang, Haotian Bao, Ninghua Zhu J. Semicond. 2020, 41(3): 032304
Desheng Zeng, Li Zhong, Suping Liu, Xiaoyu Ma J. Semicond. 2020, 41(3): 032305Analysis of the time domain characteristics of tapered semiconductor lasers
M. Benaicha, L. Dehimi, F. Pezzimenti, F. Bouzid J. Semicond. 2020, 41(3): 032701Simulation analysis of a high efficiency GaInP/Si multijunction solar cell
Zhanqiang Ren, Qingmin Li, Bo Li, Kechang Song J. Semicond. 2020, 41(3): 032901 半导体学报公众号 微信号 : JournalOfSemicond 长按二维码关注获得High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W
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