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JOS 10位编委入选“高被引科学家”名单

已有 1774 次阅读 2020-1-1 17:25 |系统分类:论文交流

2019年11月19日，科睿唯安学术研究事业部公布本年度“高被引科学家”名单，遴选出全球自然科学和社会科学的顶尖人才。全球近60个国家的6216人次来自各领域的高被引科学家入榜，Journal of Semiconductors 10位编委入榜。在此，JOS编辑部对入榜编委表示热烈祝贺！

JOS入选“高被引科学家”编委名单

编委李京波在本刊发表的文章（近三年）

N J Huo, Y J Yang, J B Li. Optoelectronics based on 2D TMDs and heterostructures[J]. J. Semicond., 2017, 38(3): 031002. doi: 10.1088/1674-4926/38/3/031002.

J B Li, X R Wang. Preface to the Special Topic on 2D Materials and Devices[J]. J. Semicond., 2017, 38(3): 031001.doi: 10.1088/1674-4926/38/3/031001.

编委谭平恒在本刊发表的文章（近三年）

X Cong, M L Lin, P H Tan, Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure[J]. J. Semicond., 2019, 40(9): 091001. doi: 10.1088/1674-4926/40/9/091001.
Z Q Zhou, Y Cui, P H Tan, X L Liu, Z M Wei, Optical and electrical properties of two-dimensional anisotropic materials[J]. J. Semicond., 2019, 40(6): 061001. doi: 10.1088/1674-4926/40/6/061001.
P H Tan, L J Zhang, L Dai, S Y Zhou, Preface to the Special Issue on 2D-Materials-Related Physical Properties and Optoelectronic Devices[J]. J. Semicond., 2019, 40(6): 060101. doi: 10.1088/1674-4926/40/6/060101.
P H Tan. Signatures of moire excitons[J]. J. Semicond., 2019, 40(4): 040202. doi: 10.1088/1674-4926/40/4/040202.
P H Tan. Detecting forbidden Raman modes[J]. J. Semicond., 2019, 40(1): 010203. doi: 10.1088/1674-4926/40/1/010203.
Q H Tan, X Zhang, X D Luo, J Zhang, P H Tan. Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings[J]. J. Semicond., 2017, 38(3): 031006. doi: 10.1088/1674-4926/38/3/031006.

编委唐江在本刊发表的文章（近三年）

编委王欣然在本刊发表的文章（近三年）

W S Li, H K Ning, Z H Yu, Y Shi, X R Wang, Reducing the power consumption of two-dimensional logic transistors[J]. J. Semicond., 2019, 40(9): 091002. doi: 10.1088/1674-4926/40/9/091002.
S X Wang, Z H Yu, X R Wang, Electrical contacts to two-dimensional transition-metal dichalcogenides[J]. J. Semicond., 2018, 39(12): 124001. doi: 10.1088/1674-4926/39/12/124001.
J B Li, X R Wang. Preface to the Special Topic on 2D Materials and Devices[J]. J. Semicond., 2017, 38(3): 031001. doi: 10.1088/1674-4926/38/3/031001.

编委赵一新在本刊发表的文章（近三年）

A H Jia, M Kan, J P Jia, Y X Zhao. Photodeposited FeOOH vs electrodeposited Co-Pi to enhance nanoporous BiVO4 for photoelectrochemical water splitting[J]. J. Semicond., 2017, 38(5): 053004. doi: 10.1088/1674-4926/38/5/053004.
N J Guo, T Y Zhang, G Li, F Xu, X F Qian, Y X Zhao. A simple fabrication of CH3NH3PbI3 perovskite for solar cells using low-purity PbI2[J]. J. Semicond., 2017, 38(1): 014004. doi: 10.1088/1674-4926/38/1/014004.

编委游经碧在本刊发表的文章（近三年）

Y Chen, Y Zhao, Q F Ye, Z M Chu, Z G Yin, X W Zhang, J B You, Improved efficiency and photo-stability of methylamine-free perovskite solar cells via cadmium doping[J]. J. Semicond., 2019, 40(12): 122201. doi: 10.1088/1674-4926/40/12/122201.
J B You, Perovskite plasmonic lasers capable of mode modulation[J]. J. Semicond., 2019, 40(7): 070203. doi: 10.1088/1674-4926/40/7/070203.
J B You . Rational molecular passivation for high-performance perovskite light-emitting diodes[J]. J. Semicond., 2019, 40(4): 040203. doi: 10.1088/1674-4926/40/4/040203.
X J Qin, Z G Zhao, Y D Wang, J B Wu, Q Jiang, J B You. Recent progress in stability of perovskite solar cells[J]. J. Semicond., 2017, 38(1): 011002. doi: 10.1088/1674-4926/38/1/011002.
J B You. Preface to the Special Topic on Perovskite Solar Cells[J]. J. Semicond., 2017, 38(1): 011001. doi: 10.1088/1674-4926/38/1/011001.