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中村修二(Shuji Nakamura)及其高引论著 精选

已有 27779 次阅读 2014-10-8 09:01 |个人分类:新观察|系统分类:论文交流| 诺贝尔奖, 高引论著, 引文桂冠奖

中村修二(Shuji Nakamura)及其高引论著

诸平

瑞典皇家科学院2014年10月7日宣布,将2014年诺贝尔物理学奖授予日本科学家赤崎勇(Isamu Akasaki)和天野宽志(Hiroshi Amano)以及美籍日裔科学家中村修二(Shuji Nakamura),以表彰他们发现了新型节能的环保光源。中村修二曾经在2002年获得汤森路透THOMSON REUTERS的引文桂冠奖Hall of Citation Laureates),时隔12年之后,在终于成为现实。所以说已经获得引文桂冠奖的科学家,延年益寿,耐心等待就有可能登上诺贝尔奖的领奖台。


Shuji Nakamura 2014

Physics, 2002

Professor, Materials Department, Director of the Center for Solid State Lighting and Displays, University of California, Santa Barbara, Santa Barbara, Calif.

诺贝尔物理学奖评选委员会认为,LED灯基于其低能耗的优点可依靠当地低成本的太阳能便能够使用,这种新型光源的问世为全球15亿未能受益于电网的人口带来了更高的生活品质。虽然这项发明仅有“20岁”,但它已经使人类从一种白色光源的新创造方式中获益匪浅。中村修二(Shuji Nakamura)在得知自己获奖的消息后,在现场电话连线中表达了惊喜之情。

有报道称对蓝色发光二极管的实用化做出突出贡献的中村修二,起初并未因此项发明从日亚公司得到任何报酬,而日亚化学禁止员工发表论文,所以中村修二在研究期间发表论文都是背着公司偷偷在国外期刊上发布的,由于他在日本国内没有发布有影响力的论文,这导致中村修二从日亚辞职后,甚至找不到一家肯接收自己的企业或研究所。无奈之下,中村修二于2000年赴美国加州大学圣巴巴拉分校任职。

日亚化学从中村修二的专利中获得了百亿美元的收益,并由此从一家名不见经传的小公司成长为行业巨头,中村修二为在2001年起诉日亚,最终法院裁定日亚向中村修二支付200亿日元(约1.82亿美元),所以,中村修二可能是有史以来最富有的诺奖得主了。

被誉为“蓝光之父”的中村修二1954年生于日本伊方町,1994年从日本徳岛大学获得博士学位,自2000年以来供职于美国加利福尼亚大学圣巴巴拉分校,现为美国国籍。

1993年,在日本日亚化学工业公司(简称“日亚公司”)做技术员的中村开发出蓝色高亮度发光二极管,使LED向实用化迈出了重要一步。

这样一名优秀的科学家,却在2000年离开日本前往美国,着实令人费解。2001年8月,中村向东京地方法院起诉原东家日亚公司,要求归还其专利所有权,并支付200亿日元专利使用费,由此揭开了这一秘密。

1993年,中村发明蓝光二极管后,由日亚公司申请获得了专利。同年12月,日亚公司开始生产蓝光二极管的照明成品,获得了巨大利润。但是,日亚公司只向中村支付了2万日元的“奖励”(申请专利和注册专利时各1万日元)。2000年,中村决定前往美国,办理辞职手续时,公司要求他签署合同,保证3年内不再从事蓝光二极管的基础技术研究,中村拒绝,并因此未能领到退职金。中村前往美国的大学就任后,日亚公司居然追到美国让他签合同,中村再度断然拒绝。未料到该公司居然在2000年12月以涉嫌泄露企业机密,将中村和他担任顾问的美国克利公司以及北卡罗莱纳大学告上法庭。

于是,忍无可忍的中村将日亚公司告上日本的法庭。2005年1月11日,在东京高等法院的主持下,中村与日亚公司达成和解,由日亚公司向其支付共计8亿4391万日元的发明补偿金。

    尽管如此,中村修二还是在日本和2000年去美国之后,先后出版了一些备受关注的论著,其中被引最多的是2000年出版的《蓝光激光二极管的完整故事》(The blue laser diode: the complete story一书,累计被引5300余次,其次是1994年在《应用物理快报》(Applied Physics Letters)发表的论文——Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes,累计被引超过3100次;2000年出版的《激光二极管》(Laser Diodes)专著,累计被引超过2200次;被引在1000次以上的还有1991年和1995年发表的2篇论文,下面摘录了中村修二的部分高引论著(被引>500次),供大家参考。

[BOOK] The blue laser diode: the complete story
S Nakamura, S Pearton, G Fasol - 2000 - books.google.com
Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the
way for a host of new applications of semiconductor lasers. The wavelengths can be tuned
by controlling the composition. For the first time it is possible to produce lasers with ...
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
S Nakamura, T Mukai, M Senoh - Applied Physics Letters, 1994 - scitation.aip.org
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐
emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active
layer, a Zn‐doped InGaN layer was used for the DH LEDs. The typical output power was ...
Laser Diodes
S Nakamura - Optoelectronic properties of semiconductors and …, 2000 - books.google.com
InGaN multi-quantum-well-structure (MQW) laser diodes (LDs) with Alo. i4Gao. g6N/GaN
modulation doped strained-layer superlattice (MD-SLS) cladding layers grown on an
epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime ...
GaN growth using GaN buffer layer
S Nakamura - Japanese Journal of Applied Physics, 1991 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between
science and engineering and an interactive platform for academia and the industry. JSAP is
a" conduit" for the transfer of fundamental concepts to the industry for development and ...
[PDF] High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures
S Nakamura, M Senoh, N Iwasa… - … JOURNAL OF APPLIED …, 1995 - 140.120.11.121
High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well
structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on
sapphire substrates. The typical green LEDs had a peak wavelength of 525 nm and full ...
Superbright green InGaN single-quantum-well-structure light-emitting diodes
S Nakamura, M Senoh, N Iwasa… - Japanese journal of …, 1995 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between
science and engineering and an interactive platform for academia and the industry. JSAP is
a" conduit" for the transfer of fundamental concepts to the industry for development and ...
The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes
S Nakamura - Science, 1998 - sciencemag.org
High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have
been obtained through the use of an InGaN active layer instead of a GaN active layer. The
localized energy states caused by In composition fluctuation in the InGaN active layer are ...
Hole compensation mechanism of p-type GaN films
S Nakamura, N Iwasa, M Senoh… - Japanese journal of …, 1992 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between
science and engineering and an interactive platform for academia and the industry. JSAP is
a" conduit" for the transfer of fundamental concepts to the industry for development and ...
Thermal annealing effects on p-type Mg-doped GaN films
S Nakamura, T Mukai, M Senoh… - Japanese Journal of …, 1992 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between
science and engineering and an interactive platform for academia and the industry. JSAP is
a" conduit" for the transfer of fundamental concepts to the industry for development and ...
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
…, M Funato, S Fujita, S Fujita, S Nakamura - Applied physics …, 1997 - scitation.aip.org
Structural analysis was performed on a purple laser diode composed of In 0.20 Ga 0.80 N (3
nm)/In 0.05 Ga 0.95 N (6 nm) multiple quantum wells, by employing transmission electron
microscopy and energy-dispersive x-ray microanalysis, both of which are assessed from ...
High-power GaN pn junction blue-light-emitting diodes
S Nakamura, T Mukai, M Senoh - Japanese Journal of Applied …, 1991 - iopscience.iop.org
The Japan Society of Applied Physics (JSAP) serves as an academic interface between
science and engineering and an interactive platform for academia and the industry. JSAP is
a" conduit" for the transfer of fundamental concepts to the industry for development and ...
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
S Nakamura, M Senoh, S Nagahama… - Applied Physics …, 1998 - ieeexplore.ieee.org
InGaN multi-quantum-well-structure laser diodes with Al0. 14Ga0. 86N/GaN modulation
doped strained-layer superlattice cladding layers grown on an epitaxially laterally
overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 ...
High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
S Nakamura, M Senoh, N Iwasa… - Applied Physics …, 1995 - scitation.aip.org
High‐power blue and violet light‐emitting diodes (LEDs) based on III–V nitrides were grown
by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the
InGaN single‐quantum‐well‐structure was used. The violet LEDs produced 5.6 mW at 20 ...
High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
S Nakamura, M Senoh, T Mukai - Applied Physics Letters, 1993 - scitation.aip.org
InGaN/GaN double‐heterostructure light‐emitting diodes were fabricated. The output power
was 90 μW and the external quantum efficiency was as high as 0.15% at a forward current of
20 mA at room temperature. The peak wavelengths of the electroluminescence (EL) ...
S Nakamura, M Senoh, S Nagahama… - Applied Physics …, 1996 - scitation.aip.org
Continuous‐wave (cw) operation of InGaN multi‐quantum‐well structure laser diodes (LDs)
was demonstrated at room temperature (RT). The threshold current and voltage of the LD
were 130 mA and 8 V, respectively. The threshold carrier density was 9 kA/cm2. The ...

Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes
T Mukai, M Yamada, S Nakamura - Japanese Journal of Applied …, 1999 - iopscience.iop.org
Highly efficient light-emitting diodes (LEDs) emitting ultraviolet (UV), blue, green, amber and
red light have been obtained through the use of InGaN active layers instead of GaN active
layers. Red LEDs with an emission wavelength of 675 nm, whose emission energy was ...

Cited by 538 Related articles All 6 versions Cite Save


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