Recently, it has been shown that placing 2D semiconductors

on hexagonal boron nitride (h-BN) can yield a drastic

improvement in their corresponding carrier mobilities. As

a layered material with the honeycomb lattice crystal structure,

the layered h-BN has advantages of atomically smooth surface

and large surface optical phonon energy, where all these are

expected to minimize the unfavorable effect of trapped charges

and optical phonon scattering, respectively.

一方面原因是由于： BN 表面非常光滑，没有 mismatch;

另一方面： BN 本身有很强的光学声子，这些很强的光学声子可以减小一些不利因素，比如：电荷捕获以及光学声子散射等。