It is known that ZnO nanostructures are attractive for its promised application such as energy harvest, room temperature UV laser, and FET devices etc. For these, the requirement for patterned vertical growth ZnO nanowire arrays is urgent. Though high quality vertical ZnO nanowire arrays can be achieved by CVD growth on epitaxial substrates such as sapphire, SiC, GaN, all the reported methods are more complex compared to our new method. As shown in the paper,  our growth process requires no carry gases, no catalysts, no expensive substrates, and no complicated and expensive fabricated facilities. Just a simple, inexpensive and robust process for making high quanlity nanowire vertical arrays over large area. Combined with transitional Photo lithography, patterned nan! owire arrays can be easily achieved and the controllable growth of single ZnO nanowire on one site is also demonstrated. We hope our work can accelerate the application research of ZnO nanostructure area.

http://pubs.acs.org/doi/abs/10.1021/nn800527m